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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FL10KM-12A HIGH-SPEED SWITCHING USE FL10KM-12A OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 q 10V DRIVE q VDSS ............................................................................... 600V q rDS (ON) (MAX) ................................................................ 1.1 q ID ......................................................................................... 10A GATE DRAIN SOURCE TO-220FN APPLICATION Switch mode power supply, Inverter fluorescent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 600 30 10 30 10 40 -55 ~ +150 -55 ~ +150 2000 2.0 Unit V V A A A W C C V g Sep.1998 L = 200H AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FL10KM-12A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 30 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.92 4.60 7.0 1150 135 45 24 40 220 85 1.5 -- Max. -- 10 1 4.0 1.10 5.50 -- -- -- -- -- -- -- -- 2.0 3.13 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 5 3 2 tw = 10s 40 101 7 5 3 2 100s 30 1ms 10ms 20 100 7 5 3 2 10 10-1 TC = 25C 0 0 50 100 150 200 7 5 Single Pulse DC 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 PD = 40W VGS = 10V 6V TC = 25C Pulse Test OUTPUT CHARACTERISTICS (TYPICAL) 10 PD = 40W TC = 25C Pulse Test VGS = 10V 6V 5V 4.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 5V 6 8 4.5V 4 4V 4 4V 2 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FL10KM-12A HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test 32 ID = 15A 4 24 3 VGS = 10V 16 10A 2 8 5A 1 0 0 4 8 12 16 20 00 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25C VDS = 50V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) 12 FORWARD TRANSFER ADMITTANCE yfs (S) 16 100 7 5 3 2 8 4 0 0 4 8 12 16 20 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 TCh = 25C VDD = 200V VGS = 10V td(off) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 Coss 102 7 5 3 2 tf 102 7 5 3 TCh = 25C 2 f = 1MHZ VGS = 0V 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 Crss tr td(on) 101 101 2 3 5 7 100 2 3 5 7 101 2 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FL10KM-12A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) VGS = 0V Pulse Test TC = 125C 75C 25C GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 TCh = 25C ID = 10A 16 32 12 VDS = 100V 200V 400V 24 8 16 4 8 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 0.5 0.2 1.2 100 7 5 1.0 0.8 0.1 3 0.05 2 PDM tw 10-1 7 5 3 2 0.02 0.01 Single Pulse T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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